Source:
IEEE Electron Device Letters , Volume 10, Issue 7, p.325-326 (1989)
Abstract:
The fabrication and performance of p-channel germanium MOSFET's having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no "looping" and indicate a peak room temprature channel mobility of 770c22/Vs. These results provide further evidence that a high-performance germanium CMOS technology is possible.
Notes:
Fulltext not available. See journal for a copy.